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(R)
BU208D BU508DFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
s
s s
s s
STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
1 2
TO-3
2 1
3
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
For TO-3 : C = Tab E = Pin2.
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) TO - 3 Total Dissipation at Tc = 25 o C St orage Temperature Max. Operating Junction Temperature 150 -65 to 175 175 Value 1500 700 10 8 15 IS OW ATT 218 50 -65 to 150 150 W
o o
Unit V V V A A
C C 1/7
September 1999
BU208D / BU508DFI
THERMAL DATA
TO-3 R t hj-ca se Thermal Resistance Junction-case Max 1 ISO WATT218 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 m A 700 Tj = 125 C
o
Min.
Typ .
Max. 1 2 300
Un it mA mA mA V
V CEO(sus ) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat ) V BE(s at) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage INDUCTIVE LO AD Storage Time Fall Time
I C = 4.5 A I C = 4.5 A
IB = 2 A IB = 2 A
1 1.3
V V
ts tf VF fT
I C = 4.5 A hF E = 2.5 V CC = 140 V L C = 0.9 mH LB = 3 H
7 550 2
ms ns V MHz
Diode F orward Voltage I F = 4 A Transition Frequency I C = 0.1 A V CE = 5 V f = 5 MHz 7
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area (TO-3)
Safe Operating Area (ISOWATT218)
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BU208D / BU508DFI
DC Current Gain Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
Switching Time Percentance vs. Case
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BU208D / BU508DFI
Figure 1: Inductive Load Switching Test Circuit.
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BU208D / BU508DFI
TO-3 MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D
C
U
V
O
N
R
B
P003F
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E
BU208D / BU508DFI
ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D
P025C
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BU208D / BU508DFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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